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2SC4215W Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC4215W Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 3 page BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor 2SC4215W Document number: BL/SSSTF041 www.galaxycn.com Rev.A 2 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 4 V Collector cut-off current ICBO VCB=4V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 μA DC current gain hFE VCE=6V,IC=1mA 40 200 Collector-base time constant CC.rbb’ VCE=6V,IC=1mA 25 ps Transition frequency fT VCE=6V, IE= 1mA 260 550 MHz CLASSIFICANTION OF hFE Marking QR QO QY hFE 90-180 135-270 200-400 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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