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| AD8614_07 |
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AD8614/AD8644 Rev. B | Page 3 of 16 SPECIFICATIONS ELECTRICAL CHARACTERISTICS Table 1. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS 1.0 2.5 mV −20°C ≤ TA ≤ +85°C 3 mV Input Bias Current IB 80 400 nA −20°C ≤ TA ≤ +85°C 500 nA Input Offset Current IOS 5 100 nA −20°C ≤ TA ≤ +85°C 200 nA Input Voltage Range 0 VS V Common-Mode Rejection Ratio CMRR VCM = 0 V to VS 60 75 dB Voltage Gain AVO VOUT = 0.5 V to VS – 0.5 V, RL = 10 kΩ 10 150 V/mV OUTPUT CHARACTERISTICS Output Voltage High VOH ILOAD = 10 mA VS − 0.15 V Output Voltage Low VOL ILOAD = 10 mA 65 150 mV Output Short-Circuit Current ISC 35 70 mA −20°C ≤ TA ≤ +85°C 30 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±2.25 V to ±9.25 V 80 110 dB Supply Current/Amplifier ISY 0.8 1.1 mA −20°C ≤ TA ≤ +85°C 1.5 mA DYNAMIC PERFORMANCE Slew Rate SR CL = 200 pF 7.5 V/μs Gain Bandwidth Product GBP 5.5 MHz Phase Margin Φo 65 Degrees Settling Time tS 0.01%, 10 V step 3 μs NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 12 nV/√Hz en f = 10 kHz 11 nV/√Hz Current Noise Density in f = 10 kHz 1 pA/√Hz 1 All typical values are for VS = 18 V. |
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