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L6560D Datasheet(PDF) 2 Page - STMicroelectronics |
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L6560D Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 11 page ABSOLUTE MAXIMUM RATINGS Symbol Pin Parameter Value Unit IVcc 8ICC +IZ 30 mA IGD 7 Output Totem Pole Peak Current (2 µs) ±700 mA INV, COMP MULT 1, 2, 3 Analog Inputs & Outputs -0.3 to 7 V CS 4 Current Sense Input -0.3 to 7 V ZCD 5 Zero Current Detector 5 (source) 10 (sink) mA mA Ptot Power Dissipation @Tamb =50 °C (Minidip) (SO8) 1 0.65 W Tj Junction Temperature Operating Range -25 to 150 °C Tstg Storage Temperature -55 to 150 °C THERMAL DATA Symbol Parameter SO 8 MINIDIP Unit Rth j-amb Thermal Resistance Junction-ambient 150 100 °C/W PIN FUNCTIONS N. Name Fun ction 1 INV Inverting input of the error amplifier. A resistive divider is connected between output regulated voltage and this point, to provide the voltage feedback. 2 COMP Output of error amplifier. A feedback compensation network is placed between this pin and the INV pin. 3 MULT Input of the multipler stage. A resistive divider connects to this pin the rectified mains. A voltage signal, proportional to the rectified mains, appears on this pin. 4 CS Input to the comparator of the control loop. The current is sensed by a resistor and the resulting voltage is applied to this pin. 5 ZCD Zero current detection input. 6 GND Ground of the control section. 7 GD Gate driver output. A push pull output stage is able to drive the Power MOS with peak current of 400mA (source and sink). 8VCC Supply voltage of driver and control circuits. PIN CONNECTION L6560 - L6560A 2/11 |
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Descripción similar - L6560D |
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