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LM2651MTC-1.8 Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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LM2651MTC-1.8 Datasheet(HTML) 4 Page - National Semiconductor (TI) |
4 / 11 page LM2651-ADJ System Parameters (V OUT = 2.5V unless otherwise specified) Symbol Parameter Conditions Typical Limit Units V FB Feedback Voltage I LOAD = 900 mA 1.238 1.200 1.263 V V(min) V(max) V OUT Output Voltage Line Regulation V IN =4Vto14V I LOAD = 900 mA 0.2 % V OUT Output Voltage Load Regulation I LOAD = 10 mA to 1.5A V IN =5V 1.3 % V OUT Output Voltage Load Regulation I LOAD = 200 mA to 1.5A V IN =5V 0.3 % V HYST Sleep Mode Output Voltage Hysteresis 24 mV All Output Voltage Versions Specifications in standard type face are for T J = 25˚C and those with boldface type apply over full operating junction tem- perature range. V IN =10V unless otherwise specified. Symbol Parameter Conditions Typical Limit Units I Q Quiescent Current 1.6 2.0 mA mA(max) I QSD Quiescent Current in Shutdown Mode Shutdown Pin Pulled Low 7 12/20 µA µA(max) R SW(ON) High-Side or Low-Side Switch On Resistance (MOSFET On Resistance + Bonding Wire Resistance) I SWITCH = 1A 110 m Ω R DS(ON) MOSFET On Resistance (High-Side or Low-Side) I SWITCH =1A 75 130 m Ω m Ω(max) I L Switch Leakage Current - High Side 130 nA Switch Leakage Current - Low Side 130 nA V BOOT Bootstrap Regulator Voltage I BOOT = 1 mA 6.75 6.45/6.40 6.95/7.00 V V(min) V(max) G M Error Amplifier Transconductance 1250 µmho V INUV V IN Undervoltage Lockout Threshold Voltage Rising Edge 3.8 3.95 V V(max) V UV-HYST Hysteresis for the Undervoltage Lockout 210 mV I CL Switch Current Limit V IN =5V 2 1.55 2.60 A A(min) A(max) I SM Sleep Mode Threshold Current V IN = 5V 100 mA A V Error Amplifier Voltage Gain 100 V/V I EA_SOURCE Error Amplifier Source Current 40 25/15 µA µA(min) I EA_SINK Error Amplifier Sink Current 65 30 µA µA(min) V EAH Error Amplifier Output Swing Upper Limit 2.70 2.50/2.40 V V(min) www.national.com 4 |
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