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SI9183DT-25-T1 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI9183DT-25-T1 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 11 page Si9183 Vishay Siliconix Document Number: 71258 S-51147—Rev. G, 20-Jun-05 www.vishay.com 3 SPECIFICATIONS (TA = 25_C) Limits −40 to 85_C Test Conditions Unless Otherwise Specified VIN = VOUT(nom) + 1 V, IOUT = 1 mA CIN = 1 mF, COUT = 2.2 mF, VSD = 1.5 V Parameter Unit Maxb Typc Minb Tempa Test Conditions Unless Otherwise Specified VIN = VOUT(nom) + 1 V, IOUT = 1 mA CIN = 1 mF, COUT = 2.2 mF, VSD = 1.5 V Symbol f = 1 kHz Room 60 Ripple Rejection DVOUT/DVIN IOUT = 150 mA f = 10 kHz Room 40 dB pp j OUT IN OUT f = 100 kHz Room 30 Dynamic Line Regulation DVO(line) VIN : VOUT(nom) + 1 V to VOUT(nom) + 2 V tR/tF = 5 ms, IOUT = 150 mA Room 10 mV Dynamic Load Regulation DVO(load) IOUT : 1 mA to 150 mA, tR/tF = 2 ms Room 30 mV VOUT Turn On Time tON VIN = 4.3 V w/o CBP Cap Room 5 ms VOUT Turn-On-Time tON VIN = 4.3 V VOUT = 3.3 V CBP = 0.1 mF Room 1000 ms Thermal Shutdown Thermal Shutdown Junction Temp tJ(s/d) Room 165 _C Thermal Hysteresis tHYST Room 20 _C Short Circuit Current ISC VOUT = 0 V Room 400 mA Shutdown Input SD Input Voltage VIH High = Regulator ON (Rising) Full 1.2 VIN V SD Input Voltage VIL Low = Regulator OFF (Falling) Full 0.4 V SD Input Currente IIL VSD = 0 V, Regulator OFF Room 0.01 mA SD Input Currente IIH VSD = 6 V, Regulator ON Room 1.0 mA Shutdown Hysteresis VHYST Full 100 mV Notes a. Room = 25_C, Full = −40 to 85_C. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Typical values for dropout voltage at VOUT w 2 V are measured at VOUT = 2.5 V, while typical values for dropout voltage at VOUT < 2 V are measured at VOUT = 1.8 V. d. Dropout voltage is defined as the input to output differential voltage at which the output voltage drops 2% below the output voltage measured with a 1-V differential, provided that VIN does not not drop below 2.0 V. e. The device’s shutdown pin includes a typical 6-MW internal pull-down resistor connected to ground. f. VOUT is defined as the output voltage of the DUT at 1 mA. |
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