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74AUC1G32 Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza 74AUC1G32
Descripción Electrónicos  Single 2-input OR gate
Download  12 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AUC1G32 Datasheet(HTML) 2 Page - NXP Semiconductors

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2001 Nov 30
2
Philips Semiconductors
Preliminary specification
Single 2-input OR gate
74AUC1G32
FEATURES
• Wide supply voltage range from 0.8 to 2.7 V
• Performance optimised for VCC = 1.8 V
• High noise immunity
• Complies with JEDEC standard:
– JESD76 (1.65 to 1.95 V)
• 8 mA output drive (VCC = 1.65 V)
• CMOS low power consumption
• Latch-up performance ≤250 mA
• 3.3 V tolerant inputs/outputs
• SC-88A and SC-74A package.
DESCRIPTION
The 74AUC1G32 is a high-performance, low-power,
low-voltage, Si-gate CMOS device.
Schmitt-trigger action at all inputs makes the circuit
tolerant for slower input rise and fall time.
This device is fully specified for partial power-down
applications using Ioff. The Ioff circuitry disables the output,
preventing the damaging current backflow through the
device when it is powered down.
The 74AUC1G32 provides the single 2-input OR function.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; input slewrate ≥ 1 V/ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi +(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
2. The condition is VI = GND to VCC.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
tPHL/tPLH
propagation delay inputs A and B to
output Y
VCC = 1.2 V; CL = 15 pF; RL =2kΩ
ns
VCC = 1.5 V; CL = 15 pF; RL =2kΩ
ns
VCC = 1.8 V; CL = 30 pF; RL =1 kΩ
ns
VCC = 2.5 V; CL = 30 pF; RL = 500 Ω
ns
CI
input capacitance
4
pF
CPD
power dissipation capacitance per buffer
VCC = 1.8 V; notes 1 and 2
14
pF


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