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NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSD611 (9AW) TO-220 MARKING : CSD 611 Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 110 V Collector Emitter Voltage VCEO 110 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 6.0 A t=100ms ICP 9.0 A Base Current IB 1.0 A Collector Power Dissipation @ Ta=25 deg C PC 2.0 W Collector Power Dissipation @ Tc=25 deg C 60 W Junction Temperature Tj 150 deg C Storage Temperature Range Tstg -55 to +150 deg C ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter Voltage VCEO IC=30mA, IB=0 110 - - V Collector Cut off Current ICBO VCB=110V, IE=0 - - 100 uA Emitter Cut off Current IEBO VEB=5V,IC=0 - - 3.0 mA Collector Emitter Saturation Voltage VCE(Sat) IC=5A, IB=5mA - - 2.5 V DC Current Gain hFE IC=2A, VCE=3V 2.0 - 20 K IC=6A, VCE=3V 1.0 - - K Dynamic Characteristics Transition Frequency ft VCE=5V,IC=0.2A, - 40 - MHz f=10MHz Collector Output Capacitance Cob VCB=10V, IE=0 - 55 - pF f=1MHz Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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