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2SK2767-01 Datasheet(PDF) 3 Page - Fuji Electric |
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2SK2767-01 Datasheet(HTML) 3 Page - Fuji Electric |
3 / 4 page 3 2SK2767-01 FUJI POWER MOSFET -50 0 50 100 150 0 2 4 6 8 10 12 14 16 max. typ. Drain-source on-state resistance RDS(on)=f(Tch):ID=2A,VGS=10V Tch [ oC] -50 0 50 100 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 min. typ. max. Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS Tch [ oC] 0 1020 304050 60 70 80 0 100 200 300 400 500 600 700 800 Vcc=180V 450V 720V 180V 450V Vcc=720V Typical gate charge characteristic Qg [nC] 0 5 10 15 20 25 30 35 40 10 -2 10 -1 10 0 10 1 10 2 10p 100p 1n 10n Typical capacitances C=f(VDS):VGS=0V,f=1MHz VDS [V] Ciss Coss Crss 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -2 10 -1 10 0 10 1 Tch=25 o C typ. Forward characteristic of reverse of diode VSD [V] 0 50 100 150 0 50 100 150 200 250 300 Avalanche energy derating Starting Tch [ o C] VGS=f(Qg):ID=3.5A,Tch=25°C IF=f(VSD):80µs Pulse test,VGS=0V Eas=f(starting Tch):Vcc=90V,IAV=3.5A |
Número de pieza similar - 2SK2767-01_1 |
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Descripción similar - 2SK2767-01_1 |
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