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SI4908DY Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4908DY Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page FEATURES D TrenchFETr Power MOSFET D 100 % Rg Tested APPLICATIONS D CCFL Inverter RoHS COMPLIANT Si4908DY Vishay Siliconix New Product Document Number: 73698 S–60218—Rev. A, 20-Feb-06 www.vishay.com 1 Dual N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)a Qg (Typ) 40 0.060 at VGS = 10 V 5.0 56 40 0.070 at VGS = 4.5 V 4.7 5.6 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4908DY-T1–E3 (Lead (Pb)–free) D1 G1 S1 N-Channel MOSFET D2 G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS "16 V TC = 25 _C 5 Continuous Drain Current (TJ = 150 _C) TC = 70 _C ID 4.7 Continuous Drain Current (TJ = 150 _C) TA = 25 _C ID 4.1b, c TA = 70 _C 3.3b, c Pulsed Drain Current (10 ms Pulse Width) IDM 20 A Source Drain Current Diode Current TC = 25 _C IS 2.3 A Source-Drain Current Diode Current TA = 25 _C IS 1.5b, c Pulsed Source-Drain Current ISM 20 Single Pulse Avalanche Current L=01mH IAS 7 Single Pulse Avalanche Energy L = 0.1 mH EAS 2.5 mJ TC= 25 _C 2.75 Maximum Power Dissipation TC= 70 _C PD 1.75 W Maximum Power Dissipation TA = 25 _C PD 1.85b, c W TA = 70 _C 1.18b, c Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typ Max Unit Maximum Junction-to-Ambientb, d t v 10 sec RthJA 57 67.5 _C/W Maximum Junction-to-Foot (Drain) Steady-State RthJF 35 45 _C/W Notes a. Based on TC = 25 _C. b. Surface Mounted on 1” x 1” FR4 Board. c. t = 10 sec. d. Maximum under steady state conditions is 120 _C/W. |
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