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STYN225S Datasheet(PDF) 1 Page - Sirectifier Semiconductors |
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STYN225S Datasheet(HTML) 1 Page - Sirectifier Semiconductors |
1 / 2 page STYN225(S) thru STYN1025(S) Discrete Thyristors(SCRs) Dim. A B C D E F G H J K M N Q R Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Dimensions TO-220AB ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) Tc = 100°C 25 A IT(AV) Average on-state current (180° conduction angle) Tc = 100°C 16 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25°C 314 A tp = 10 ms 300 I ²t I ²t Value for fusing tp = 10 ms Tj = 25°C 450 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr £ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate power dissipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C VRGM Maximum peak reverse gate voltage (for TN8 & TYN only) 5 V Dimensions TO-263(D 2PAK) 1. Gate 2. Collector 3. Emitter 4. Collector Botton Side Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 8.00 8.89 .315 .350 E 9.65 10.29 .380 .405 E1 6.22 8.13 .245 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.20 0 .008 R 0.46 0.74 .018 .029 A G A K A K G K G A |
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