SA12B5 datasheet(3/5 Pages) STMICROELECTRONICS

No. de pieza	SA12B5

Descripción Electrónicos	SCHOTTKY ARRAYS

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

1E-4

1E-3

1E-2

1E-1

1E+0

Ipp(A)

Tj=25

°C

Tj=85

°C

tp=2.5

µs

Tj=-40

°C

Vcl(V)

Fig1-1: Clamping forward voltage versus peak

pulse current (typical values, low level).

0

25

50

75

100

125

1E-2

1E-1

1E+0

1E+1

1E+2

Tj(

°C)

IR(

µA)

VR=7.5V

Fig 2: Leakage current versus junction tempera-

ture (typical values).

0

25

50

75

100

125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

IFSM[Tj] / IFSM[Tj=25

°C]

Tj(

°C)

Fig 4: Non repetitive surge peak forward current

versus initial junction temperature.

0

1234567

0.1

1.0

5.0

Ipp(A)

Tj=25

°C

tp=2.5

µs

Vcl(V)

Fig1-2: Clamping forward voltage versus peak

pulse current (typical values, high level).

1

10

100

1000

1

2

5

10

tp(

µs)

IFSM(A)

Tj initial =25

°C

Fig 3: Non repetitive surge peak forward current

versus pulse duration (rectangular waveform).

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

16

18

20

22

24

26

28

30

Vi/o-gnd(V)

Ci/o(pF)

Vcc=5V

F=1MHz

Vosc=30mV

Fig 5: Capacitance between input or output and

ground versus applied voltage (typical values).

SA12B5 / SA16B3 / SA16B6

3/5

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