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STB40NF20 Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STB40NF20
Descripción Electrónicos  N-channel 200V - 0.038廓 -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET??Power MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STB40NF20 Datasheet(HTML) 5 Page - STMicroelectronics

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STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20
Electrical characteristics
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Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
40
160
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 20A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20A,
di/dt = 100A/µs,
VDD = 25V
(see Figure 19)
192
922
9.6
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20A,
di/dt = 100A/µs,
VDD = 25V, Tj = 150°C
(see Figure 19)
242
1440
11.9
ns
nC
A


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