SD1274-01 datasheet(2/7 Pages) STMICROELECTRONICS

No. de pieza	SD1274-01

Descripción Electrónicos	RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS

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SD1274-01

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Table 2. Absolute Maximum Ratings (Tcase = 25°C)

Table 3. Thermal Data

ELECTRICAL SPECIFICATIONS (TCASE = 25°C)

Table 4. Static

Table 5. Dynamic

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

36

V

VCEO

Collector-Emitter Voltage

16

V

VCES

Collector-Emitter Voltage

36

V

VEBO

Emitter-Base Voltage

4.0

V

IC

Device Current

8.0

A

PDISS

Power Dissipation

70

W

TJ

Junction Temperature

+200

°C

TSTG

Storage Temperature

– 65 to +150

°C

Symbol

Parameter

Value

Unit

RTH(j-c)

Junction-Case Thermal Resistance

1.2

°C/W

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

BVCES

IC = 15 mA; VBE = 0 mA

36

—

V

BVCEO

IC = 50 mA; IB = 0 mA

16

—

V

BVEBO

IE = 5 mA; IC = 0 mA

4.0

—

V

ICBO

VCB = 15 V; IE = 0 mA

—

5

mA

hFE

VCE = 5 V; IC = 250 mA

20

—

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

POUT

f = 160 MHz; PIN = 3.0 W; VCE = 13.6 V

30

—

W

GP

f = 160 MHz; PIN = 3.0 W; VCE = 13.6 V

10

—

dB

COB

f = 1 MHz; VCB = 15 V

—

95

—

pF

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