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STC5NF30V Datasheet(PDF) 5 Page - STMicroelectronics |
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STC5NF30V Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 12 page STC5NF30V Electrical characteristics 5/12 Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 5 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 20 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 5A, VGS = 0 1.2 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5A, di/dt = 100A/µs, VDD = 10V, TJ = 150°C Figure 15 on page 8 26 13 1 ns µC A |
Número de pieza similar - STC5NF30V_06 |
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Descripción similar - STC5NF30V_06 |
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