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IRF2907ZS-7PPBF Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRF2907ZS-7PPBF
Descripción Electrónicos  HEXFET짰 Power MOSFET
Download  11 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF2907ZS-7PPBF Datasheet(HTML) 2 Page - International Rectifier

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IRF2907ZS-7PPbF
2
www.irf.com
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C,
L=0.026mH, RG = 25Ω, IAS = 110A, VGS =10V.
Part not recommended for use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
„ Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80%
VDSS.
… Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
† This value determined from sample failure population. 100%
tested to this value in production.
‡ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ of approximately 90°C.
‰ Solder mounted on IMS substrate.
S
D
G
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage75
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.066
–––
V/°C
RDS(on) SMD
Static Drain-to-Source On-Resistance
–––
3.0
3.8
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
94
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Qg
Total Gate Charge
–––
170
260
nC
Qgs
Gate-to-Source Charge
–––
55
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
66
–––
td(on)
Turn-On Delay Time
–––
21
–––
ns
tr
Rise Time
–––
90
–––
td(off)
Turn-Off Delay Time
–––
92
–––
tf
Fall Time
–––
44
–––
LD
Internal Drain Inductance
–––
4.5
–––
nH
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
7580
–––
pF
Coss
Output Capacitance
–––
970
–––
Crss
Reverse Transfer Capacitance
–––
540
–––
Coss
Output Capacitance
–––
3750
–––
Coss
Output Capacitance
–––
650
–––
Coss eff.
Effective Output Capacitance
–––
1110
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
160
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
700
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
3553ns
Qrr
Reverse Recovery Charge
–––
40
60
nC
VDS = VGS, ID = 250µA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 110A e
TJ = 25°C, IF = 110A, VDD = 38V
di/dt = 100A/µs
e
TJ = 25°C, IS = 110A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 10V
d
MOSFET symbol
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
Conditions
VGS = 0V, VDS = 0V to 60V
ƒ = 1.0MHz, See Fig. 5
RG = 2.6Ω
ID = 110A
VDS = 25V, ID = 110A
VDD = 38V
ID = 110A
VGS = 20V
VGS = -20V
VDS = 60V
VGS = 10V
e


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