STGB30NC60WT4 datasheet(4/16 Pages) STMICROELECTRONICS

No. de pieza	STGB30NC60WT4

Descripción Electrónicos	30 A - 600 V - ultra fast IGBT

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STGB30NC60WT4 - STGP30NC60W - STGW30NC60W

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2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 1 mA

600

V

VCE(sat)

Collector-emitter saturation

voltage

VGE=15 V, IC= 20 A

VGE=15 V, IC= 20 A,Tc= 125 °C

2.1

1.8

2.5

V

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

3.75

5.75

V

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

VCE = 600 V, Tc=125 °C

10

1

µA

mA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ±20 V

± 100

nA

gfs

(1)

1.

Pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VCE = 15 V, IC= 20 A

15

S

Table 5.

Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE=0

2080

175

52

pF

Qg

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390 V, IC = 20 A,

VGE = 15 V,

(see Figure 17)

102

17.5

47

nC

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STGB30NC60WT4 Datasheet(PDF) 4 Page - STMicroelectronics

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