SD551-23-41-221 datasheet(1/1 Pages) ADVANCEDPHOTONIX

No. de pieza	SD551-23-41-221

Descripción Electrónicos	High Voltage P-Type Quad Silicon Detector

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Fabricante Electrónico	ADVANCEDPHOTONIX [Advanced Photonix, Inc.]

Página de inicio	http://www.advancedphotonix.com

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FEATURES

DESCRIPTION

APPLICATIONS

• Large active area

• Low Capacitance

• High speed

• High responsivity

SYMBOL

PARAMETER

MIN

MAX

UNITS

VBR

Reverse Voltage

180

V

TSTG

Storage Temperature

-55

+100

°C

TO

Operating Temperature

-40

+85

°C

TS

Soldering Temperature*

+260

°C

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ID

Dark Current

VR = 180 V

40

1000

nA

CJ

Junction Capacitance

VR = 180 V, f = 100 KHz

12

15

pF

R

Responsivity

l= 1064nm, VR =180V

0.41

0.48

A/W

VBR

Breakdown Voltage

I = 10 μA

200

V

NEP

Noise Equivalent Power

VR = 180V @ l=1064

2.3x10

-13

W/ √ Hz

tr

Response Time**

RL = 50 Ω,VR = 180V

10

12

nS

High Voltage P-Type Quad Silicon Detector

SD 551-23-41-221

PACKAGE DIMENSIONS INCH [mm]

TO-46 PACKAGE

The SD 551-23-41-221 is a NIR enhanced silicon

P-type detector used for applications requiring fast

response with low capacitance and high responsivity

packaged in a hermetic TO-8 metal package.

• Laser guided munition

* 1/16 inch from case for 3 seconds max.

ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED

**Response time of 10% to 90% is specified at 660nm wavelength light.

Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are

subject to change without notice.

Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com

REV 4/21/06

ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED

CHIP DIMENSIONS INCH [mm]

PACKAGE DIMENSIONS INCH [mm]

CHIP DIMENSIONS INCH [mm]

TO-8 PACKAGE

.645 [16.38]

8X 45°

.010 [0.25] GAP

Ø.550 [13.97] ACTIVE AREA

GUARD RING

4X CATHODE PADS

SCHEMATIC

A

D

B

C

.105 [2.67]

.337 [8.56]

7X .440 [11.18]

1

2

3

4

5

6

7

CATHODE A (PIN 4)

CATHODE B (PIN 6)

CATHODE C (PIN 1)

CATHODE D (PIN 2)

GUARD RING (PIN 3)

COMMON ANODE (PIN 7)

CASE GROUND (PIN 5)

7X Ø.018 [0.46]

Ø.730 [18.54]

Ø.955 [24.27]

Ø1.032 [26.21]

45°

Ø.730 [18.54]

PIN CIRCLE

30°

.010 [0.25] MAX

A

D

B

C

GLASS ABOVE

CAP TOP EDGE

43°

VIEWING

ANGLE

D

A

B

C

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