STB6LNC60 datasheet(2/9 Pages) STMICROELECTRONICS

No. de pieza	STB6LNC60

Descripción Electrónicos	N-CHANNEL 600V - 1ohm - 5.8A D2PAK PowerMesh?줚I MOSFET

Download	9 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

Logo

2 / 9 page

STB6LNC60

2/9

THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Rthj-case

Thermal Resistance Junction-case Max

1.25

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

5.8

A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

300

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

600

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

50

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ±30V

±100

nA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

23

4

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 3 A

1.0

1.25

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS > ID(on) x RDS(on)max,

ID =3A

6S

Ciss

Input Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

830

pF

Coss

Output Capacitance

120

pF

Crss

Reverse Transfer

Capacitance

15.5

pF

Número de pieza similar - STB6LNC60

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	STB6000	48Kb / 2P	QPSK DVB/DIRECTVTM direct conversion tuner IC
EIC discrete Semiconduc...	STB6010	73Kb / 4P	SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
EIC discrete Semiconduc...	STB6010	78Kb / 4P	SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
Sangdest Microelectroni...	STB60100C	163Kb / 7P	SCHOTTKY RECTIFIER
SMC Diode Solutions Co....	STB60100C	366Kb / 7P	SCHOTTKY RECTIFIER Rev. A

More results

Descripción similar - STB6LNC60

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	STP6LNC60FP	324Kb / 9P	N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP PowerMesh?줚I MOSFET
	STB4NC60	429Kb / 9P	N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?줚I MOSFET
	STB9NC60	461Kb / 10P	N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh?줚I MOSFET
	STP6NC60	364Kb / 10P	N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET
	STB6NB50	92Kb / 9P	N - CHANNEL 500V - 1.35ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET
	STB8NC50	441Kb / 9P	N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh?줚I MOSFET
	STB4NC50	244Kb / 8P	N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh?줚I MOSFET
	STE40NC60	270Kb / 8P	N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh?줚I MOSFET
	STN1HNC60	260Kb / 8P	N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh?줚I MOSFET
	STW12NB60	250Kb / 8P	N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?줚I MOSFET

More results

STB6LNC60 Datasheet(PDF) 2 Page - STMicroelectronics

STB6LNC60 Datasheet(HTML) 2 Page - STMicroelectronics

Número de pieza similar - STB6LNC60

Descripción similar - STB6LNC60

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Descarga

Enlace URL