STB8NA50 datasheet(3/10 Pages) STMICROELECTRONICS

No. de pieza	STB8NA50

Descripción Electrónicos	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

T est Con ditio ns

Min .

T yp.

Max.

Uni t

td(on)

tr

Turn-on Time

Rise Time

VDD = 250 V

ID =4 A

RG =4.7

Ω

VGS =10 V

(see test circuit, figure 3)

18

25

35

ns

(di/ dt)on

Turn-on Current Slope

VDD = 400 V

ID =8 A

RG =47

Ω

VGS =10 V

(see test circuit, f igure 5)

220

A/

µs

Qg

Qgs

Qgd

Tot al Gate Charge

Gat e-Source Charge

Gat e-Drain Charge

VDD =400 V

ID =8 A

VGS =10 V

55

9

25

75

nC

SWITCHING OFF

Symbo l

Parameter

T est Con ditio ns

Min .

T yp.

Max.

Uni t

tr(Voff)

tf

tc

Off -volt age Rise Time

Fall Time

Cross-over Time

VDD = 400 V

ID =8 A

RG =4.7

Ω VGS =10 V

(see test circuit, figure 5)

15

25

22

35

ns

SOURCE DRAIN DIODE

Symbo l

Parameter

T est Con ditio ns

Min .

T yp.

Max.

Uni t

ISD

ISDM (

•)

Source-drain Current

(pulsed)

8

32

A

VSD (

∗)

Forward On Voltage

ISD =8 A

VGS =0

1.6

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 8 A

di/dt = 100 A/

µs

VDD =100 V

Tj =150

oC

(see test circuit, figure 5)

500

6. 5

26

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Area

Thermal Impedance

STB8NA50

3/10

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