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STD5NM50 Datasheet(PDF) 2 Page - STMicroelectronics |
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STD5NM50 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 10 page STD5NM50/STD5NM50-1 2/10 THERMAL DATA AVALANCHE CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Rthj-case Thermal Resistance Junction-case Max 1.25 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 2.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 300 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 500 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1µA VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 34 5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 2.5A 0.7 0.8 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 25Vx, ID = 2.5A 3.5 S Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 415 pF Coss Output Capacitance 88 pF Crss Reverse Transfer Capacitance 12 pF Coss eq. (2) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V 50 pF RG Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 3 Ω |
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