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STD5NM60 Datasheet(PDF) 3 Page - STMicroelectronics |
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STD5NM60 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 6 page 3/6 STD5NM60 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Rise Time VDD = 300V, ID = 2.5A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 16 ns tr 9ns Qg Total Gate Charge VDD = 400V, ID = 5A, VGS = 10V 13 nC Qgs Gate-Source Charge 3 nC Qgd Gate-Drain Charge 11 nC Symbol Parameter Test Condit ions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 480V, ID = 5A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 20 ns tf Fall Time 29 ns tc Cross-over Time 30 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 5 A ISDM (2) Source-drain Current (pulsed) 20 A VSD (1) Forward On Voltage ISD = 5A, VGS =0 1.5 V trr Reverse Recovery Time ISD = 5A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 300 ns Qrr Reverse Recovery Charge 1.8 µC IRRM Reverse Recovery Current 12 A |
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Descripción similar - STD5NM60 |
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