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TSH114IDT Datasheet(PDF) 4 Page - STMicroelectronics |
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TSH114IDT Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics TSH110-TSH111-TSH112-TSH113-TSH114 4/15 Tr Rise time for 200mV step AVCL=+2, Rfb (1)=820Ω//2pF Load=100 Ω 9ns Tf Fall time 9ns Ov Overshoot 16 % St Settling time @ 0.05% 60 ns ΔG Differential gain AVCL=+2, RL=100Ω F=4.5MHz, Vout=1Vpeak 0.05 % Δφ Differential phase 0.05 ° Noise and harmonic performance en Equivalent input voltage noise Frequency : 1MHz 3nV/ √Hz in Equivalent input current noise 8.5 pA/ √Hz THD Total harmonic distortion AVCL=+2, F=2MHz RL=100Ω Vout=2Vpeak 64.4 dB IM3 Third order inter modulation product AVCL=+2, Vout=2Vpp RL=100Ω F1=1MHz, F2=1.1MHz dBc @900kHz 90 @1.2MHz 90 @3.1MHz 86 @3.2MHz 83 Matching characteristics Gf Gain flatness F=(DC) to 6MHz AVCL=+2, Vout=2Vpp 0.1 dB Vo1/Vo2 Channel separation F=1MHz to 10MHz 65 dB 1. Rfb is the feedback resistance between the output and the inverting input of the amplifier. Table 3. Dual supply voltage, VCC= ±2.5V, Rfb (1)= 680Ω, Tamb = 25°C (unless otherwise specified) (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit |
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