STP11NM60FP datasheet(1/12 Pages) STMICROELECTRONICS

No. de pieza	STP11NM60FP

Descripción Electrónicos	N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?줡ower MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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May 2003

STP11NM60 - STP11NM60FP

STB11NM60 - STB11NM60-1

N-CHANNEL 600V - 0.4

Ω-11A TO-220/TO-220FP/D2PAK/I2PAK

MDmesh™Power MOSFET

(*)Limited only by maximum temperature allowed

(1)ISD<11A, di/dt<400A/µs, VDD<V(BR)DSS,TJ<TJMAX

TYPICAL RDS(on) = 0.4Ω

HIGH dv/dt AND AVALANCHE CAPABILITIES

100% AVALANCHE TESTED

LOW INPUT CAPACITANCE AND GATE

CHARGE

LOW GATE INPUT RESISTANCE

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET

technology that associates the Multiple Drain pro-

cess with the Company’s PowerMESH™ horizontal

layout. The resulting product has an outstanding low

on-resistance, impressively high dv/dt and excellent

avalanche characteristics. The adoption of the

Company’s proprietary strip technique yields overall

dynamic performance that is significantly better than

that of similar competition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increasing

power density of high voltage converters allowing

system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP11NM60

STP11NM60FP

STB11NM60

STB11NM60-1

600 V

< 0.45

Ω

< 0.45

Ω

< 0.45

Ω

< 0.45

Ω

11 A

Symbol

Parameter

Value

Unit

STP(B)11NM60(-1)

STP11NM60FP

VDS

Drain-source Voltage (VGS =0)

600

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

600

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuous) at TC = 25°C

11

11 (*)

A

ID

Drain Current (continuous) at TC = 100°C

7

7 (*)

A

IDM ( )

Drain Current (pulsed)

44

44 (*)

A

PTOT

Total Dissipation at TC = 25°C

160

35

W

Derating Factor

1.28

0.28

W/°C

dv/dt(1)

Peak Diode Recovery voltage slope

15

V/ns

VISO

Insulation Winthstand Voltage (DC)

--

2500

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

TO-220

1

2

3

1

2

3

I2PAK

1

2

3

TO-220FP

1

3

D2PAK

INTERNAL SCHEMATIC DIAGRAM

Número de pieza similar - STP11NM60FP

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	STP11NM60FP	364Kb / 16P	N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
Inchange Semiconductor ...	STP11NM60FP	309Kb / 2P	isc N-Channel Mosfet Transistor

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Descripción similar - STP11NM60FP

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	STP11NM60A	367Kb / 11P	N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh?줡ower MOSFET
	STP11NM60	364Kb / 16P	N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
	STP6NK60Z	578Kb / 13P	N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET April 2003
	STP22NM60	386Kb / 11P	N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh?줡ower MOSFET
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	STP8NM50	329Kb / 9P	N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP MDmesh?줡ower MOSFET
	STP20NM60	355Kb / 15P	N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
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