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STP2NC70ZFP Datasheet(PDF) 2 Page - STMicroelectronics

No. de pieza STP2NC70ZFP
Descripción Electrónicos  N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH?줚II MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP2NC70ZFP Datasheet(HTML) 2 Page - STMicroelectronics

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STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
2/13
ABSOLUTE MAXIMUM RATINGS
(
l) Pulse width limited by safe operating area
(1) ISD ≤10A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
Note: 3.
∆VBV = αT (25°-T) BVGSO(25°)
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
Symbol
Parameter
Value
Unit
STP2NC70Z
STP2NC70ZFP
STD1NC70Z
STD1NC70Z-1
VDS
Drain-source Voltage (VGS = 0)
700
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
700
V
VGS
Gate- source Voltage
± 25
V
ID
Drain Current (continuos) at TC = 25°C
1.4
1.4 (*)
1.4
A
ID
Drain Current (continuos) at TC = 100°C
0.9
0.9 (*)
0.9
A
IDM (l)
Drain Current (pulsed)
5.6
5.6 (*)
5.6
A
PTOT
Total Dissipation at TC = 25°C
50
25
45
W
Derating Factor
0.4
0.2
0.36
W/°C
IGS
Gate-source Current (DC)
± 50
mA
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
Ω)
2000
V
dv/dt (1)
Peak Diode Recovery voltage slope
3
V/ns
VISO
Insulation Withstand Voltage (DC)
-
2500
-
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-65 to 150
-65 to 150
°C
°C
TO-220
TO-220FP
DPAK
IPAK
Rthj-case
Thermal Resistance Junction-case Max
2.5
5
2.75
°C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max (for SMD) (#)
100
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
100
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
275
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
1.4
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
60
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
25
V
αT
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10-4/°C


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