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STP55NF03L Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STP55NF03L
Descripción Electrónicos  N-CHANNEL 30V - 0.01 ohm - 55A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP55NF03L Datasheet(HTML) 1 Page - STMicroelectronics

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February 2001
STP55NF03L
N-CHANNEL 30V - 0.01
Ω - 55A TO-220
STripFET
™ POWER MOSFET
s
TYPICAL RDS(on) = 0.01
Ω
s
OPTIMIMIZED FOR HIGH SWITCHING
OPERATIONS
s
LOW GATE CHARGE
s
LOGIC LEVEL GATE DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
“Single
Feature
Size
™” strip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
LOW VOLTAGE DC-DC CONVERTERS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
HIGH EFFICIENCY SWITCHING CIRCUITS
TYPE
VDSS
RDS(on)
ID
STP55NF03L
30 V
<0.013
Ω
55 A
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS =0)
30
V
VDGR
Drain-gate Voltage (RGS =20 kΩ)
30
V
VGS
Gate- source Voltage
±15
V
ID
Drain Current (continuos) at TC =25°C
55
A
ID
Drain Current (continuos) at TC = 100°C39
A
IDM(•)
Drain Current (pulsed)
220
A
Ptot
Total Dissipation at TC =25°C
80
W
Derating Factor
0.53
W/
°C
Tstg
Storage Temperature
–60 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C
INTERNAL SCHEMATIC DIAGRAM


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