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TC3957 Datasheet(PDF) 1 Page - Transcom, Inc. |
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TC3957 Datasheet(HTML) 1 Page - Transcom, Inc. |
1 / 3 page TC3957 REV2_20080516 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 1 / 3 1W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 1W Typical Output Power at 6GHz • 10dB Typical Linear Power Gain at 6GHz • High Linearity: IP3 = 40 dBm Typical at 6GHz • High Power Added Efficiency: Nominal PAE of 35% at 6GHz • Breakdown Voltage: BVDGO ≥ 15V • Lg = 0.35 µm, Wg = 2.4 mm • 100 % DC Tested • Suitable for High Reliability Application • Lost Cost Ceramic Package DESCRIPTION The TC3957 is a self-bias Cu-based ceramic packaged device with TC1501N PHEMT GaAs FETs, which is designed to provide the single power supply application. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and ground the source, which is suitable for oscillator, power amplifier application in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (TA=25[) Symbol CONDITIONS MIN TYP MAX UNIT P1dB Output Power at 1dB Gain Compression Point, f = 6GHz VDS = 8 V 29 30 dBm GL Linear Power Gain, f = 6GHz VDS = 8 V 10 dB IP3 Intercept Point of the 3 rd-order Intermodulation, f = 6GHz V DS = 8 V, *PSCL = 17 dBm 40 dBm PAE Power Added Efficiency at 1dB Compression Power, f = 6GHz 35 % IDS Drain-Source Current at VDS = 8 V 300 mA BVDGO Drain-Gate Breakdown Voltage at IDGO = 1.2mA 15 18 Volts Rth Thermal Resistance 16 °C/W Note: *PSCL: Output Power of Single Carrier Level. PHOTO ENLARGEMENT |
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