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STB6NC80 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STB6NC80
Descripción Electrónicos  N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB6NC80 Datasheet(HTML) 3 Page - STMicroelectronics

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STP6NC80Z/FP/STP6NC80Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
∆VBV = αT(25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =400 V, ID =3 A
RG = 4.7Ω VGS =10V
(see test circuit, Figure 3)
26
ns
tr
Rise Time
10
ns
Qg
Total Gate Charge
VDD =640V, ID = 6A,
VGS =10V
45
nC
Qgs
Gate-Source Charge
12
nC
Qgd
Gate-Drain Charge
18
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 640V, ID =6 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
11
ns
tf
Fall Time
13
ns
tc
Cross-over Time
19
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
5.4
A
ISDM (2)
Source-drain Current (pulsed)
21
A
VSD (1)
Forward On Voltage
ISD = 5.4 A, VGS =0
1.6
V
trr
Reverse Recovery Time
ISD = 6 A, di/dt = 100A/µs,
VDD =50V, Tj = 150°C
(see test circuit, Figure 5)
850
ns
Qrr
Reverse Recovery Charge
8.1
µC
IRRM
Reverse Recovery Current
19
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
25
V
αT
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10-4/°C
Rz
Dynamic Resistance
ID =50mA, VGS =0
90


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