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STP7NB30 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP7NB30 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  STP7NB30 STP7NB30FP N - CHANNEL 300V - 0.75 Ω - 7A - TO-220/TO-220FP PowerMESH ™ MOSFET s TYPICAL RDS(on) = 0.75 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ® INTERNAL SCHEMATIC DIAGRAM August 1999 TO-220 TO-220FP 1 2 3 1 2 3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it ST P7NB30 STP7NB30F P VDS Drain-source Voltage (VGS = 0) 300 V VDGR Drain- gate Voltage (RGS =20 k Ω) 300 V VGS G ate-source Volt age ± 30 V ID Drain Current (continuous) at Tc =25 oC7 4 A ID Drain Current (continuous) at Tc =100 oC4.4 2.5 A IDM ( •) Drain Current (pulsed) 28 28 A Ptot T otal Dissipat ion at Tc =25 oC85 30 W Derating Factor 0.68 0.24 W / o C dv/dt (1) Peak Diode Recovery voltage slope 5.5 5.5 V/ns VISO I nsulation W ithstand Voltage (DC) 2000 V Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID ST P7NB30 ST P7NB30FP 300 V 300 V <0.90 Ω <0.90 Ω 7A 4A 1/9 |
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