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IRF6720S2TRPBF Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRF6720S2TRPBF
Descripción Electrónicos  DirectFET TM Power MOSFET
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF6720S2TRPBF Datasheet(HTML) 1 Page - International Rectifier

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1
04/07/08
IRF6720S2TRPbF
IRF6720S2TR1PbF
DirectFET
™ Power MOSFET ‚
Applicable DirectFET Outline and Substrate Outline

Typical values (unless otherwise specified)
DirectFET
™ ISOMETRIC
PD - 97315
S1
l RoHS Compliant Containing No Lead and Bromide

l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application

l Compatible with existing Surface Mount Techniques

l 100% Rg tested
Description
The IRF6720S2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6720S2PbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6720S2PbF has been optimized for the control FET socket of synchronous buck oper-
ating from 12 volt bus converters.
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.31mH, RG = 25Ω, IAS = 8.8A.
Notes:
0
5
10
15
20
VGS, Gate -to -Source Voltage (V)
4
8
12
16
20
ID = 11A
TJ = 25°C
TJ = 125°C
Qg tot
Qgd
Qgs2
Qrr
Qoss
Vgs(th)
7.9nC
2.8nC
0.9nC
14nC
5.1nC
2.0V
S1
S2
SB
M2
M4
L4
L6
L8
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
12
Max.
9.2
35
92
±20
30
11
8.8
VDSS
VGS
RDS(on)
RDS(on)
30V max
±20V max
6.0m
Ω@ 10V 9.8mΩ@ 4.5V
02468
10
12
14
16
18
20
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VDS= 24V
VDS= 15V
ID= 8.8A


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