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STP80N05-09 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STP80N05-09
Descripción Electrónicos  N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP80N05-09 Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
P arameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =30 V
ID =40 A
RG =4.7
Ω
VGS =10 V
(see test c ircui t, figure 3)
32
160
42
200
ns
ns
(di/ dt)on
Turn-on Current S lope
VDD =48 V
ID =80 A
RG =5 0
Ω
VGS =10 V
(see test c ircui t, figure 5)
240
A /
µs
Qg
Qgs
Qgd
Total Ga te Charge
Gate-Source Charge
Gate-Drain Charge
VDD =40 V
ID =80 A VGS = 10 V
230
30
60
280
nC
nC
nC
SWITCHING OFF
Symbol
P arameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-volt age Ri se Time
Fal l Ti me
Cross-over Time
VDD =48 V
ID =40 A
RG =4.7
Ω
VGS =10 V
(see test c ircui t, figure 5)
35
175
240
46
230
300
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
P arameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
80
320
A
A
VSD (
∗)
Forward On Voltage
ISD =80 A
VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery
Tim e
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 80 A
di/ dt = 100 A/
µs
VR =30 V
Tj =150
oC
(see test c ircui t, figure 5)
125
0.6
10
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(
•) Pulse widthlimited by safe operating area
Safe Operating Area
Thermal Impedance
STP80N05-09
3/9


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