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FDD5N50U Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDD5N50U Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDD5N50U Rev. A www.fairchildsemi.com 2 Package Marking and Ordering Information T C = 25 oC unless otherwise noted Electrical Characteristics Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDD5N50U FDD5N50UTM D-PAK 380mm 16mm 2500 FDD5N50U FDD5N50UTF D-PAK 380mm 16mm 2000 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 500 - - V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25oC- 0.6 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 25 µA VDS = 400V, TC = 125oC - - 250 IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250µA3 - 5 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 1.5A - 1.65 2 Ω gFS Forward Transconductance VDS = 20V, ID = 1.5A (Note 4) -4 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 485 650 pF Coss Output Capacitance - 65 90 pF Crss Reverse Transfer Capacitance - 5 8 pF Qg(tot) Total Gate Charge at 10V VDS = 400V, ID = 5A VGS = 10V (Note 4, 5) -11 15 nC Qgs Gate to Source Gate Charge - 3 - nC Qgd Gate to Drain “Miller” Charge - 5 - nC td(on) Turn-On Delay Time VDD = 250V, ID = 5A RG = 25Ω (Note 4, 5) -14 38 ns tr Turn-On Rise Time - 21 52 ns td(off) Turn-Off Delay Time - 27 64 ns tf Turn-Off Fall Time - 20 50 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 3 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 12 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 3A - - 1.6 V trr Reverse Recovery Time VGS = 0V, ISD = 5A dIF/dt = 100A/µs (Note 4) -36 - ns Qrr Reverse Recovery Charge - 33 - nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 61mH, IAS = 3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics |
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