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FFPF08S60SN Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FFPF08S60SN Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page tm May 2008 ©2008 Fairchild Semiconductor Corporation FFPF08S60SN Rev. A www.fairchildsemi.com 1 STEALTH II Rectifier TM FFPF08S60SN Features • High Speed Switching, trr < 25ns @ IF = 8A • High Reverse Voltage and High Reliability • RoHS compliant Applications • General Purpose • Switching Mode Power Supply • Boost Diode in continuous mode power factor corrections • Power switching circuits 8A, 600V STEALTHTM II Rectifier The FFPF08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epi- taxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applica- tions. Their low stored charge and hyperfast soft recovery mini- mize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Absolute Maximum Ratings T C = 25 oC unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current @ TC = 60 oC 8 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 60 A TJ, TSTG Operating and Storage Temperature Range -65 to +150 oC Symbol Parameter Ratings Units RθJC Maximum Thermal Resistance, Junction to Case 6.8 oC/W Device Marking Device Package Reel Size Tape Width Quantity F08S60SN FFPF08S60SNTU TO220F-2L - - 50 1. Cathode 2. Anode 1. Cathode 2. Anode TO-220F-2L |
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