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FQA13N50CF Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQA13N50CF Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQA13N50CF Rev. A1 July 2007 FRFET ® FQA13N50CF 500V N-Channel MOSFET Features • 15A, 500V, RDS(on) = 0.48Ω @VGS = 10 V • Low gate charge (typical 43nC) • Low Crss (typical 20pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 100ns) • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. Absolute Maximum Ratings Thermal Characteristics D G S GS D TO-3P FQA Series Symbol Parameter FQA13N50CF Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 15 A - Continuous (TC = 100°C) 9.5 A IDM Drain Current - Pulsed (Note 1) 60 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 860 mJ IAR Avalanche Current (Note 1) 15 A EAR Repetitive Avalanche Energy (Note 1) 21.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 218 W - Derate above 25°C 1.56 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8''"from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.58 °C/W RθJS Thermal Resistance, Case-to-Sink 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W |
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