©2007 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FQA13N50CF Rev. A1

July 2007

FRFET

®

FQA13N50CF

500V N-Channel MOSFET

Features

• Low gate charge (typical 43nC)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Fast recovery body diode (typical 100ns)

• RoHS compliant

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize

on-state

resistance,

provide

superior

switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies, active power factor

correction, electronic lamp ballast based on half bridge

topology.

Absolute Maximum Ratings

Thermal Characteristics

D

G

S

GS

D

TO-3P

FQA Series

Symbol

Parameter

FQA13N50CF

Units

Drain-Source Voltage

500

V

Drain Current

15

A

9.5

A

Drain Current

- Pulsed

(Note 1)

60

A

Gate-Source Voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

860

mJ

Avalanche Current

(Note 1)

15

A

Repetitive Avalanche Energy

(Note 1)

21.8

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

218

W

- Derate above 25°C

1.56

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8''"from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Case

--

0.58

°C/W

Thermal Resistance, Case-to-Sink

0.24

--

°C/W

Thermal Resistance, Junction-to-Ambient

--

40

°C/W