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FQA10N80 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQA10N80 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQA10N80_F109 Rev. A August 2007 QFET ® FQA10N80_F109 800V N-Channel MOSFET Features • 9.8A, 800V, RDS(on) = 1.05Ω @VGS = 10 V • Low gate charge ( typical 55 nC) • Low Crss ( typical 24pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. Absolute Maximum Ratings Thermal Characteristics D G S GS D TO-3PN FQA Series Symbol Parameter FQA10N80_F109 Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 9.8 A - Continuous (TC = 100°C) 6.19 A IDM Drain Current - Pulsed (Note 1) 39.2 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 920 mJ IAR Avalanche Current (Note 1) 9.8 A EAR Repetitive Avalanche Energy (Note 1) 24 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TC = 25°C) 240 W - Derate above 25°C 1.92 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.52 °C/W RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W |
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