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FDS6984AS Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDS6984AS Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 9 page  J ©2008 Fairchild Semiconductor Corporation FDS6984AS Rev A1(X) FDS6984AS Dual Notebook Power Supply N-Channel PowerTrench ® SyncFET ™ General Description The FDS6984AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6984AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low- side switch (Q2) is optimized to reduce conduction losses. Q2 also includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. Features • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky diode 8.5A, 30V R DS(on) max= 20 mΩ @ VGS = 10V R DS(on) max= 28 mΩ @ VGS = 4.5V • Q1: Optimized for low switching losses Low gate charge (8nC typical) 5.5A, 30V R DS(on) max= 31 mΩ @ VGS = 10V R DS(on) max= 40 mΩ @ VGS = 4.5V S2 SO-8 G2 S1 G1 D2 D2 D1 D1 4 3 2 1 5 6 7 8 Q1 Q2 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Q2 Q1 Units VDSS Drain-Source Voltage 30 30 V VGSS Gate-Source Voltage ±20 ±20 V ID Drain Current - Continuous (Note 1a) 8.5 5.5 A - Pulsed 30 20 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6984AS FDS6984AS 13” 12mm 2500 units • RoHS Compliant May 2008 |
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