STF12NM50N datasheet(3/19 Pages) STMICROELECTRONICS

No. de pieza	STF12NM50N

Descripción Electrónicos	N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

Download	19 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

Logo

3 / 19 page

STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N

Electrical ratings

3/19

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 / I²PAK

D²PAK / DPAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

500

V

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

11

11(1)

1.

Limited only by maximum temperature allowed

A

ID

Drain current (continuous) at TC=100 °C

6.7

6.7(1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

44

44 (1)

A

PTOT

Total dissipation at TC = 25 °C

100

25

W

dv/dt(3)

3.

ISD ≤ 11A, di/dt ≤ 400A/µs, VDD =80%V(BR)DSS

Peak diode recovery voltage slope

15

V/ns

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t=1 s;TC=25 °C)

--

2500

V

Tstg

Storage temperature

-55 to 150

°C

TJ

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220 I²PAK DPAK D²PAK TO-220FP

Rthj-case

Thermal resistance junction-

case max

1.25

5

°C/W

Rthj-amb

Thermal resistance junction-amb

max

62.5

--

62.5

°C/W

Rthj-pcb

Thermal resistance junction-pcb

max

--

50

30

--

°C/W

Tl

Maximum lead temperature for

soldering purposes

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

5A

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Ias, Vdd=50V)

350

mJ

Número de pieza similar - STF12NM50N

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	STF12NM50N	510Kb / 18P	N-channel 500V - 0.29廓 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh??Power MOSFET
STMicroelectronics	STF12NM50ND	1Mb / 16P	N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP
Inchange Semiconductor ...	STF12NM50ND	310Kb / 2P	isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	STF12NM50ND	1Mb / 8P	Power MOSFET

More results

Descripción similar - STF12NM50N

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	STB16NM50N	554Kb / 18P	N-channel 500 V - 0.21 廓 - 15 A MDmesh??II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP
	STX25NM50N	616Kb / 18P	N-channel 500 V, 0.11 廓, 22 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
	STP30NM50N	628Kb / 18P	N-channel 500 V, 0.090 廓, 27 A MDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
	STB13NM50N	573Kb / 18P	N-channel 500 V - 0.250 廓 - 12 A MDmesh??II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK
	STX11NM60N	641Kb / 20P	N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK
	STD10NM50N	1Mb / 18P	N-channel 500 V, 0.53 廓, 7 A DPAK, TO-220FP, TO-220 MDmesh??II Power MOSFET
	STB30NM60N	768Kb / 18P	N-channel 600 V, 0.1 廓, 25 A, MDmesh??II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
	STB14NM65N	550Kb / 18P	N-channel 650 V, 0.33 廓, 12 A MDmesh??II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247
	STB25NM60NX	578Kb / 18P	N-channel 600 V, 0.130 廓 , 21 A, MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
	STX8NM60N	706Kb / 19P	N-channel 600 V, 0.56 廓,7 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK

More results

STF12NM50N Datasheet(PDF) 3 Page - STMicroelectronics

STF12NM50N Datasheet(HTML) 3 Page - STMicroelectronics

Número de pieza similar - STF12NM50N

Descripción similar - STF12NM50N

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Datasheet Descarga

Enlace URL