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STB20NM50FD Datasheet(PDF) 5 Page - STMicroelectronics |
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STB20NM50FD Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 16 page STB20NM50FD - STF20NM50FD - STP20NM50FD Electrical characteristics 5/16 Table 7. Switching times Symbol Parameter Test conditions Min Typ Max Unit td(on) tr Turn-on delay time Rise time VDD = 250 V, ID = 10 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) 22 20 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 400 V, ID = 20 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) 6 15 30 ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 20 80 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 20 A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD =20 A, di/dt =100 A/µs, VDD = 60 V, TJ=150 °C (see Figure 17) 245 2 16 ns nC A |
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