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2SK975TZ-E Datasheet(PDF) 2 Page - Renesas Technology Corp

No. de pieza 2SK975TZ-E
Descripción Electrónicos  Silicon N Channel MOS FET
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK975TZ-E Datasheet(HTML) 2 Page - Renesas Technology Corp

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2SK975
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
1.5
A
Drain peak current
ID(pulse)
*1
4.5
A
Body to drain diode reverse drain current
IDR
1.5
A
Channel dissipation
Pch
900
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 µs, duty cycle ≤ 1%
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
60
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
±10
µA
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
100
µA
VDS = 50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
2.0
V
ID = 1 mA, VDS = 10 V
0.3
0.4
ID = 1 A, VGS = 10 V *
2
Static drain to source on state
resistance
RDS(off)
0.4
0.55
ID = 1 A, VGS = 4 V *
2
Forward transfer admittance
|yfs|
0.9
1.5
S
ID = 1 A, VDS = 10 V *
2
Input capacitance
Ciss
140
pF
Output capacitance
Coss
70
pF
Reverse transfer capacitance
Crss
20
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
3
ns
Rise time
tr
12
ns
Turn-off delay time
td(off)
50
ns
Fall time
tf
30
ns
ID = 1 A, VGS = 10 V,
RL = 30
Body to drain diode forward voltage
VDF
0.9
V
IF = 1.5 A, VGS = 0
Body to drain diode reverse recovery
time
trr
45
ns
IF = 1.5 A, VGS = 0,
diF/dt = 50 A/
µs
Note:
2. Pulse test


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