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2SK975TZ-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SK975TZ-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SK975 Rev.2.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 1.5 A Drain peak current ID(pulse) *1 4.5 A Body to drain diode reverse drain current IDR 1.5 A Channel dissipation Pch 900 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 100 µA VDS = 50 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V 0.3 0.4 Ω ID = 1 A, VGS = 10 V * 2 Static drain to source on state resistance RDS(off) — 0.4 0.55 Ω ID = 1 A, VGS = 4 V * 2 Forward transfer admittance |yfs| 0.9 1.5 — S ID = 1 A, VDS = 10 V * 2 Input capacitance Ciss — 140 — pF Output capacitance Coss — 70 — pF Reverse transfer capacitance Crss — 20 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 3 — ns Rise time tr — 12 — ns Turn-off delay time td(off) — 50 — ns Fall time tf — 30 — ns ID = 1 A, VGS = 10 V, RL = 30 Ω Body to drain diode forward voltage VDF — 0.9 — V IF = 1.5 A, VGS = 0 Body to drain diode reverse recovery time trr — 45 — ns IF = 1.5 A, VGS = 0, diF/dt = 50 A/ µs Note: 2. Pulse test |
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