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2SK1334BYTL-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SK1334BYTL-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SK1334 Rev.2.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS ±20 V Drain current ID 1 A Drain peak current ID(pulse) *1 2 A Body to drain diode reverse drain current IDR 1 A Channel dissipation Pch *2 1 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 200 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 50 µA VDS = 160 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V — 2.5 3.8 Ω ID = 0.5 A, VGS = 10 V * 3 Static drain to source on state resistance RDS(on) — 4.5 7.0 Ω ID = 2 A, VGS = 10 V * 3 Forward transfer admittance |yfs| 0.4 0.6 — S ID = 0.5 A, VDS = 10 V * 3 Input capacitance Ciss — 80 — pF Output capacitance Coss — 40 — pF Reverse transfer capacitance Crss — 7 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 5 — ns Rise time tr — 8 — ns Turn-off delay time td(off) — 10 — ns Fall time tf — 7 — ns ID = 0.5 A, VGS = 10 V, RL = 60 Ω Body to drain diode forward voltage VDF — 1.0 — V IF = 1 A, VGS = 0 Body to drain diode reverse recovery time trr — 75 — ns IF = 1 A, VGS = 0, diF/dt = 50 A/ µs Notes: 3. Pulse test |
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