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2SK1400A-E Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK1400A-E Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1400, 2SK1400A Rev.2.00 Sep 07, 2005 page 4 of 6 2.0 40 160 Case Temperature TC (°C) 1.6 0.4 080 120 0 0.8 1.2 Static Drain to Source on State Resistance vs. Temperature Pulse Test VGS = 10 V –40 10 A 5 A 2 A 50 0.2 10 Drain Current ID (A) 20 2 0.1 0.5 2 0.5 5 10 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test 1 15 75 °C –25 °C TC = 25°C 500 0.2 5 Reverse Drain Current IDR (A) 200 20 1 5 50 100 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/ µs, V GS = 0 Ta = 25 °C Pulse Test 10 0.5 2 10 20 20 50 Drain to Source Voltage VDS (V) 100 10 30 40 Static Drain-Source on State Resistance vs. Drain Current 0 10 Crss Coss Ciss VGS = 0 V f = 1 MHz 1,000 10,000 500 16 40 Gate Charge Qg (nc) 400 24 032 300 200 100 VDD = 50 V VDS Dynamic Input Characteristics VDD = 50 V 100 V 20 16 12 8 4 0 0 8 200 V 100 V 200 V VGS ID = 7 A 500 0.5 10 Drain Current ID (A) 200 20 0.2 1 5 5 50 100 0.1 10 2 Switching Characteristics tf td (on) td (off) tr VGS = 10 V, VDD = 30 V PW = 2 µs, duty ≤ 1 % |
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