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2SK2553L-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SK2553L-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 9 page 2SK2553(L), 2SK2553(S) Rev.10.00 Sep 07, 2005 page 2 of 8 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 50 A Drain peak current ID(pulse) Note 1 200 A Body to drain diode reverse drain current IDR 50 A Avalanche current IAP Note 3 45 A Avalanche energy EAR Note 3 174 mJ Channel dissipation Pch Note 2 75 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V — 7 10 m Ω ID = 25 A, VGS = 10 V Note 4 Static drain to source on state resistance RDS(on) — 10 16 m Ω ID = 25 A, VGS = 4 V Note 4 Forward transfer admittance |yfs| 35 55 — S ID = 25 A, VDS = 10 V Note 4 Input capacitance Ciss — 3550 — pF Output capacitance Coss — 1760 — pF Reverse transfer capacitance Crss — 500 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 35 — ns Rise time tr — 230 — ns Turn-off delay time td(off) — 470 — ns Fall time tf — 360 — ns ID = 25 A, VGS = 10 V, RL = 1.2 Ω Body to drain diode forward voltage VDF — 0.85 — V IF = 50 A, VGS = 0 Body to drain diode reverse recovery time trr — 135 — ns IF = 50 A, VGS = 0 diF / dt = 50 A / µs Note: 4. Pulse Test |
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