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2SK3378ENTR-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SK3378ENTR-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SK3378 REJ03G1599-0200 Rev.2.00 Oct 23, 2007 Page 2 of 6 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 100 µA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±5 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.3 — 2.3 V ID = 10 µA, VDS = 5 V RDS(on) — 2.7 3.5 Ω ID = 50 mA, VGS = 10 V Note 3 Static drain to source on state resistance RDS(on) — 4.7 7.0 Ω ID = 20 mA, VGS = 4 V Note 3 Forward transfer admittance |yfs| 55 85 — mS ID = 50 mA, VDS =10 V Note 3 Input capacitance Ciss — 3 — pF Output capacitance Coss — 8 — pF Reverse transfer capacitance Crss — 1 — pF VDS = 10 V VGS = 0 f = 1 MHz Turn-on delay time td(on) — 100 — ns Rise time tr — 330 — ns Turn-off delay time td(off) — 1150 — ns Fall time tf — 940 — ns ID = 50 mA, VGS = 10 V RL = 200 Ω Notes: 3. Pulse test |
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