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2SK3147STL-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SK3147STL-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 9 page  2SK3147(L), 2SK3147(S) Rev.2.00 Sep 07, 2005 page 2 of 8 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V Drain current ID 5 A Drain peak current ID(pulse) Note1 20 A Body-drain diode reverse drain current IDR 5 A Avalanche current IAP Note3 5 A Avalanche energy EAR Note3 2.5 mJ Channel dissipation Pch Note2 20 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 100 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V RDS(on) — 0.1 0.13 Ω ID = 3 A, VGS = 10 V Note4 Static drain to source on state resistance RDS(on) — 0.13 0.18 Ω ID = 3 A, VGS = 4 V Note4 Forward transfer admittance |yfs| 3.5 6 — S ID = 3 A, VDS = 10 V Note4 Input capacitance Ciss — 420 — pF Output capacitance Coss — 185 — pF Reverse transfer capacitance Crss — 100 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 10 — ns Rise time tr — 35 — ns Turn-off delay time td(off) — 110 — ns Fall time tf — 60 — ns ID = 3 A, VGS = 10V, RL = 10 Ω Body–drain diode forward voltage VDF — 0.85 — V IF = 5 A, VGS = 0 Body–drain diode reverse recovery time trr — 85 — ns IF = 5 A, VGS = 0 diF/ dt = 50 A/ µs Note: 4. Pulse test |
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