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2SJ506S Datasheet(PDF) 4 Page - Renesas Technology Corp

No. de pieza 2SJ506S
Descripción Electrónicos  Silicon P Channel MOS FET
Download  8 Pages
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ506S Datasheet(HTML) 4 Page - Renesas Technology Corp

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2SJ506(L), 2SJ506(S)
Rev.5.00 Sep 07, 2005 page 4 of 7
200
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
40
80
120
160
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
ID = –10 A
ID = –10 A
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
100
50
10
20
1
2
5
0.5
–0.1 –0.2 –0.5
–2
–1
–5
–20
–10
–50
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2
–0.5 –1
–2
–5
–10 –20
100
50
10
20
di / dt = 50 A /
µs
VGS = 0, Ta = 25°C
0
–10
–20
–30
–40
–50
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
5000
2000
200
500
1000
100
20
50
10
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
0
Gate Charge
Qg (nc)
0
–20
–16
–12
–8
–4
–50
–40
–30
–20
–10
Dynamic Input Characteristics
816
24
32
40
VDS
VGS
1000
200
500
100
20
50
5
10
–0.2 –0.5 –1 –2
–10 –20
–5
–50
–0.1
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching Characteristics
VDD = –5 V
–10 V
–25 V
VDD = –25 V
–10 V
–5 V
–10 V
VGS = –4 V
–5 A
–10 A
–2 A
–2 A, –5 A
VGS = –10 V, VDD = –10 V
PW = 10
µs, duty ≤ 1 %


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