2SA1011P / 2SC2344P

No.8522-1/4

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

(--)180

V

Collector-to-Emitter Voltage

VCEO

(--)160

V

Emitter-to-Base Voltage

VEBO

(--)6

V

Collector Current

IC

(--)1.5

A

Collector Current (Pulse)

ICP

(--)3

A

Collector Dissipation

PC

Tc=25°C30

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=(--)120V, IE=0A

(--)10

µA

Emitter Cutoff Current

IEBO

VEB=(--)4V, IC=0A

(--)10

µA

DC Current Gain

hFE

VCE=(--)5V, IC=(--)300mA

60*

200*

Gain-Bandwidth Product

fT

VCE=(--)10V, IC=(--)50mA

100

MHz

Output Capacitance

Cob

VCB=(--)10V, f=1MHz

(30)23

pF

Base-to-Emitter Voltage

VBE

VCE=(--)5A, IC=(--)10mA

(--)1.5

V

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=(--)500mA, IB=(--)50mA

(--0.5)0.3

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=(--)1mA, IE=0A

(--)180

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=(--)1mA, RBE=∞

(--)160

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=(--)1mA, IC=0A

(--)6

V

Continued on next page.

* : The 2SA1011P/2SC2344P are classified by 300mA hFE as follows :

Rank

D

E

hFE

60 to 120

100 to 200

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Ordering number : EN8522

62707DA TI IM TC-00000697

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customer

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SANYO Semiconductors

DATA SHEET

2SA1011P / 2SC2344P

PNP / NPN Epitaxial Planar Silicon Transistors

High-Voltage Switching, AF Power Amp,

100W Output Predriver Applications