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STK760-221A-E Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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STK760-221A-E Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 9 page STK760-221A-E No. A1052-2/9 Specifications Absolute maximum ratings at Tc = 25 °C Parameter Symbol Conditions Ratings unit Collector-to-emitter voltage VCES 600 V Repetitive peak collector current ICP *1 180 A Collector current IC 70 A IGBT (TR2+TR3) Allowable power dissipation Pd 166 W Diode reverse voltage VRM 600 V Repetitive peak forward current IF2P *1 160 A Forward Current IF2 41 A FRD (D2) Allowable power dissipation Pd 73 W Repetitive peak forward current IFP *1 15 A Forward current IF3 7A FRD (D3) Allowable power dissipation Pd 13 W Supply voltage (Pin 1) Vs 21 to 50 V Supply current (Pin 1) Isc 60 mA Pin 5 VVDET Pin 12 VEI Pin 13 VOVP -0.3 to 5.0 V Pin 9 VIS -10 to 5.0 V Signal pin input voltage Pin 4 VONF -0.3 to VCC V Oscillation frequency fOSC 40 kHz Maximum AC input voltage VAC Single-phase full-wave rectification waveform voltage 264 V Maximum output voltage VO Under the operating conditions of the application circuit 450 V Input current (in steady state) IIN Under the operating conditions of the application circuit. 20 Arms Load power Wo VAC=200V 4kW Chip junction temperature Tj 150 °C Operating case temperature Tc Center of the resin package on the reverse side *2 -20 to +105 °C Storage temperature Tstg -40 to +125 °C Tightening torque M4 screws *3 1.17 N • m Dielectric strength voltage VINS Sine wave, 50Hz, AC 1 minute *4 2000 VRMS *1. Repetitive peak current with the duty ratio of D=0.1 and tp=1ms. *2. The measurement point must be within 10 millimeters square wide in the center of the resin package on the reverse side. *3. The tightening torque must be within the range of 0.79 to 1.17N • m. The flatness of the heat sink to be connected must be 0.15mm or less. *4. Test conditions: AC 2500V for 1 second. Electrical Characteristics at Tc=25 °C, Vs=21V with the designated circuit (Apply VCC=18.0V directly to pin 2 unless Vs input is specified.) Parameter Symbol Conditions min typ max unit Test circuit Power output block Collector-to-emitter cutoff current (TR2+TR3) ICES VCE=600V 200 μA Fig.1 Collector-to-emitter saturation voltage (TR2+TR3) VCE(sat) VCC=18.0V, IC=40A 1.9 2.4 V Fig.2 Diode reverse voltage (D2) IR VR=600V 100 μA Fig.1 Diode forward voltage (D2) VF IF=40A 2.1 2.6 V Fig.3 Diode forward voltage (D3) VF IF=5A 2.5 3.5 V Fig.3 θj-c1 IGBT (TR2+TR3) 0.75 °C /W θj-c2 FRD (D2) 1.7 °C /W Junction-to-case thermal resistance θj-c3 FRD (D3) 9.0 °C /W Continued on next page. |
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