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STK760-221A-E Datasheet(PDF) 2 Page - Sanyo Semicon Device

No. de pieza STK760-221A-E
Descripción Electrónicos  Thick-Film Hybrid IC Single-phase Rectification PFC Hybrid IC
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Fabricante Electrónico  SANYO [Sanyo Semicon Device]
Página de inicio  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

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STK760-221A-E
No. A1052-2/9
Specifications
Absolute maximum ratings at Tc = 25
°C
Parameter
Symbol
Conditions
Ratings
unit
Collector-to-emitter voltage
VCES
600
V
Repetitive peak collector current
ICP
*1
180
A
Collector current
IC
70
A
IGBT
(TR2+TR3)
Allowable power dissipation
Pd
166
W
Diode reverse voltage
VRM
600
V
Repetitive peak forward current
IF2P
*1
160
A
Forward Current
IF2
41
A
FRD
(D2)
Allowable power dissipation
Pd
73
W
Repetitive peak forward current
IFP
*1
15
A
Forward current
IF3
7A
FRD
(D3)
Allowable power dissipation
Pd
13
W
Supply voltage (Pin 1)
Vs
21 to 50
V
Supply current (Pin 1)
Isc
60
mA
Pin 5
VVDET
Pin 12
VEI
Pin 13
VOVP
-0.3 to 5.0
V
Pin 9
VIS
-10 to 5.0
V
Signal pin input voltage
Pin 4
VONF
-0.3 to VCC
V
Oscillation frequency
fOSC
40
kHz
Maximum AC input voltage
VAC
Single-phase full-wave rectification
waveform voltage
264
V
Maximum output voltage
VO
Under the operating conditions of the
application circuit
450
V
Input current (in steady state)
IIN
Under the operating conditions of the
application circuit.
20
Arms
Load power
Wo
VAC=200V
4kW
Chip junction temperature
Tj
150
°C
Operating case temperature
Tc
Center of the resin package on the
reverse side *2
-20 to +105
°C
Storage temperature
Tstg
-40 to +125
°C
Tightening torque
M4 screws *3
1.17
N
• m
Dielectric strength voltage
VINS
Sine wave, 50Hz, AC 1 minute *4
2000
VRMS
*1. Repetitive peak current with the duty ratio of D=0.1 and tp=1ms.
*2. The measurement point must be within 10 millimeters square wide in the center of the resin package on the
reverse side.
*3. The tightening torque must be within the range of 0.79 to 1.17N
• m.
The flatness of the heat sink to be connected must be 0.15mm or less.
*4. Test conditions: AC 2500V for 1 second.
Electrical Characteristics at Tc=25
°C, Vs=21V with the designated circuit
(Apply VCC=18.0V directly to pin 2 unless Vs input is specified.)
Parameter
Symbol
Conditions
min
typ
max
unit
Test
circuit
Power output block
Collector-to-emitter cutoff current (TR2+TR3)
ICES
VCE=600V
200
μA
Fig.1
Collector-to-emitter saturation voltage
(TR2+TR3)
VCE(sat)
VCC=18.0V, IC=40A
1.9
2.4
V
Fig.2
Diode reverse voltage (D2)
IR
VR=600V
100
μA
Fig.1
Diode forward voltage (D2)
VF
IF=40A
2.1
2.6
V
Fig.3
Diode forward voltage (D3)
VF
IF=5A
2.5
3.5
V
Fig.3
θj-c1
IGBT (TR2+TR3)
0.75
°C /W
θj-c2
FRD (D2)
1.7
°C /W
Junction-to-case thermal resistance
θj-c3
FRD (D3)
9.0
°C /W
Continued on next page.


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