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IRF520 Datasheet(PDF) 2 Page - Vishay Siliconix |
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IRF520 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91017 2 S-81240-Rev. A, 16-Jun-08 IRF520, SiHF520 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC -2.5 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V - - 25 µA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 5.5 Ab -- 0.27 Ω Forward Transconductance gfs VDS = 50 V, ID = 5.5 Ab 2.7 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 360 - pF Output Capacitance Coss - 150 - Reverse Transfer Capacitance Crss -34 - Total Gate Charge Qg VGS = 10 V ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b -- 16 nC Gate-Source Charge Qgs -- 4.4 Gate-Drain Charge Qgd -- 7.7 Turn-On Delay Time td(on) VDD = 50 V, ID = 9.2 A, RG = 18 Ω, RD = 5.2 Ω, see fig. 10b -8.8 - ns Rise Time tr -30 - Turn-Off Delay Time td(off) -19 - Fall Time tf -20 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 9.2 A Pulsed Diode Forward Currenta ISM -- 37 Body Diode Voltage VSD TJ = 25 °C, IS = 9.2 A, VGS = 0 Vb -- 1.8 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µsb - 110 260 ns Body Diode Reverse Recovery Charge Qrr - 0.53 1.3 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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