Document Number: 91071

www.vishay.com

S-81432-Rev. A, 07-Jul-08

1

Power MOSFET

IRF840S, SiHF840S

Vishay Siliconix

FEATURES

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirement

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The SMD-220 is a surface mount power package capable of

accommodating die size up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in

any existing surface mount package. The SMD-220 is

suitable for high current applications because of its low

internal connection resistance and can dissipate up to 2.0 W

in a typical surface mount application.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

500

0.85

63

9.3

32

Configuration

Single

N-Channel MOSFET

G

D

S

G D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

Lead (Pb)-free

IRF840SPbF

SiHF840S-E3

SnPb

IRF840S

SiHF840S

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

± 20

Continuous Drain Current

8.0

A

5.1

32

Linear Derating Factor

1.0

W/°C

0.025

510

mJ

8.0

A

13

mJ

Maximum Power Dissipation

125

W

3.1

dV/dt

3.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply