Document Number: 91102

www.vishay.com

S-Pending-Rev. A, 03-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRFB9N30A, SiHFB9N30A

Vishay Siliconix

FEATURES

• Dynamic dv/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third Generation Power MOSFETs from Vishay provides the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost

effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at lower dissipation levels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

300

0.45

33

6.9

12

Configuration

Single

N-Channel MOSFET

G

D

S

TO-220

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-220

Lead (Pb)-free

IRFB9N30APbF

SiHFB9N30A-E3

SnPb

IRFB9N30A

SiHFB9N30A

PARAMETER

SYMBOL

LIMIT

UNIT

Gate-Source Voltage

± 30

V

Continuous Drain Current

9.3

A

5.9

37

Linear Derating Factor

0.77

W/°C

160

mJ

9.3

A

9.6

mJ

Maximum Power Dissipation

96

W

dV/dt

4.6

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply