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IRFBC30SPBF Datasheet(PDF) 2 Page - Vishay Siliconix

No. de pieza IRFBC30SPBF
Descripción Electrónicos  Power MOSFET
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRFBC30SPBF Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 91111
2
S-Pending-Rev. A, 10-Jun-08
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 µs; duty cycle ≤ 2 %.
c. Uses IRFBC30/SiHFBC30 data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
-40
°C/W
Maximum Junction-to-Case (Drain)
RthJC
-1.7
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
600
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = 1 mAc
-0.62
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
-
-
100
µA
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
500
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 2.2 Ab
--
2.2
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 2.2 Ac
2.5
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5c
-
660
-
pF
Output Capacitance
Coss
-86
-
Reverse Transfer Capacitance
Crss
-19
-
Total Gate Charge
Qg
VGS = 10 V
ID = 3.6 A, VDS = 360 V,
see fig. 6 and 13b, c
--
31
nC
Gate-Source Charge
Qgs
--
4.6
Gate-Drain Charge
Qgd
--
17
Turn-On Delay Time
td(on)
VDD = 300 V, ID = 3.6 A,
RG = 12 Ω, RD = 82 Ω, see fig. 10b, c
-11
-
ns
Rise Time
tr
-13
-
Turn-Off Delay Time
td(off)
-35
-
Fall Time
tf
-14
-
Internal Source Inductance
LS
Between lead, and center of die contcat
-
7.5
-
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
3.6
A
Pulsed Diode Forward Currenta
ISM
--
14
Body Diode Voltage
VSD
TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb
--
1.6
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/µsb, c
-
370
810
ns
Body Diode Reverse Recovery Charge
Qrr
-2.0
4.2
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G


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